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| NTF6P02T3 Power MOSFET -10 Amps, -20 Volts P-Channel SOT-223 Features http://onsemi.com * * * * * Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified Pb-Free Package is Available -10 AMPERES -20 VOLTS RDS(on) = 44 mW (Typ.) S Typical Applications * Power Management in Portables and Battery-Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (Note 1) - Continuous @ TA = 25C - Continuous @ TA = 70C - Single Pulse (tp = 10 ms) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = -20 Vdc, VGS = -5.0 Vdc, IL(pk) = -10 A, L = 3.0 mH, RG = 25W) Thermal Resistance - Junction to Lead (Note 1) - Junction to Ambient (Note 2) - Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID Value -20 8.0 -10 -8.4 -35 8.3 -55 to +150 150 Unit Vdc Vdc Adc Apk W C mJ 1 2 3 G D P-Channel MOSFET MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 AYW 6P02G G 1 Gate 2 3 Drain Source IDM PD TJ, Tstg EAS SOT-223 CASE 318E STYLE 3 RqJL RqJA RqJA TL 15 71.4 160 260 C/W C A = Assembly Location Y = Year W = Work Week 6P02 = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Steady State. 2. When surface mounted to an FR4 board using 1" pad size, (Cu. Area 1.127 sq in), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State. ORDERING INFORMATION Device NTF6P02T3 NTF6P02T3G Package SOT-223 Shipping 4000/Tape & Reel SOT-223 4000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2010 January, 2010 - Rev. 3 1 Publication Order Number: NTF6P02T3/D NTF6P02T3 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = -250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = -20 Vdc, VGS = 0 Vdc) (VDS = -20 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc) V(BR)DSS -20 - - - - -25 -11 - - - - - -1.0 -10 100 Vdc mV/C mAdc IDSS IGSS nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = -250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 4) (VGS = -4.5 Vdc, ID = -6.0 Adc) (VGS = -2.5 Vdc, ID = -4.0 Adc) (VGS = -2.5 Vdc, ID = -3.0 Adc) Forward Transconductance (Note 4) (VDS = -10 Vdc, ID = -6.0 Adc) VGS(th) -0.4 - - - - - -0.7 2.6 44 57 57 12 -1.0 - 50 70 - - Vdc mV/C mW RDS(on) gfs Mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Input Capacitance Output Capacitance Transfer Capacitance (VDS = -10 Vdc, VGS = 0 V, f = 1.0 MHz) (VDS = -16 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss Coss Crss Ciss Coss Crss - - - - - - 900 350 90 940 410 110 1200 500 150 - - - pF pF SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = -16 Vdc, ID = -6.0 Adc, VGS = -4.5 Vdc) (Note 4) (VDD = -16 Vdc, ID = -6.0 Adc, VGS = -4.5 Vdc, RG = 2.5 W) (VDD = -5.0 Vdc, ID = -1.0 Adc, VGS = -4.5 Vdc, RG = 6.0 W) td(on) tr td(off) tf td(on) tr td(off) tf QT Qgs Qgd - - - - - - - - - - - 7.0 25 75 50 8.0 30 60 60 15 1.7 6.0 12 45 125 85 - - - - 20 - - nC ns ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = -3.0 Adc, VGS = 0 Vdc) (Note 4) (IS = -2.1 Adc, VGS = 0 Vdc) (IS = -3.0 Adc, VGS = 0 Vdc, TJ = 125C) (IS = -3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 4) VSD - - - - - - - -0.82 -0.74 -0.68 42 17 25 0.036 -1.2 - - - - - - mC Vdc Reverse Recovery Time trr ta tb QRR ns Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 5. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTF6P02T3 TYPICAL ELECTRICAL CHARACTERISTICS 12 -10 V -7.0 V -5.0 V 9 12 -ID, DRAIN CURRENT (AMPS) VDS -10 V 10 8 6 4 TJ = -55C 2 0 TJ = 25C 0 0.5 1 TJ = 100C 1.5 2 2.5 3 -2.2 V -ID, DRAIN CURRENT (AMPS) -2.0 V TJ = 25C -2.4 V -3.2 V -4.4 V -1.8 V 6 -1.6 V 3 -1.4 V VGS = -1.2 V 0 0 1 2 3 4 5 6 7 8 9 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 0.08 Figure 2. Transfer Characteristics TJ = 25C 0.07 0.06 0.05 0.04 0.03 0.02 VGS = -4.5 V VGS = -2.5 V 0.15 ID = -6.0 A TJ = 25C 0.1 0.05 0 0 1 2 3 4 5 6 2 4 6 8 10 12 14 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -6.0 A VGS = -4.5 V 10,000 Figure 4. On-Resistance versus Drain Current and Gate Voltage VGS = 0 V -IDSS, LEAKAGE (nA) TJ = 150C 1000 TJ = 100C 100 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTF6P02T3 TYPICAL ELECTRICAL CHARACTERISTICS -VGS, GATE-TO-SOURCE VOLTAGE (V) VDS = 0 V VGS = 0 V Ciss C, CAPACITANCE (pF) 2400 1800 1200 600 0 10 5 -VGS 0 -VDS 5 10 15 20 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) QT -VDS -VGS -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 3000 5 4 3 Qgs 2 1 0 0 4 8 12 16 Qg, TOTAL GATE CHARGE (nC) Qgd ID = -6.0 A TJ = 25C 20 TJ = 25C 16 12 8 4 0 Crss Ciss Coss Crss Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 -IS, SOURCE CURRENT (AMPS) VDD = -16 V ID = -3.0 A VGS = -4.5 V td(off) tf tr 7 6 5 4 3 2 1 0 0.3 0.6 1.2 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) VGS = 0 V TJ = 25C t, TIME (ns) 100 10 td(on) 1 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTF6P02T3 TYPICAL ELECTRICAL CHARACTERISTICS 1 RTHJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t, TIME (s) 1.0E+01 1.0E+02 AMBIENT 1.0E+03 0.0175 W CHIP JUNCTION 0.0154 F 0.0710 W 0.0854 F 0.2706 W 0.5779 W 0.7086 W 0.3074 F 1.7891 F 107.55 F NORMALIZED TO RqJA AT STEADY STATE (1 PAD) Figure 11. FET Thermal Response http://onsemi.com 5 NTF6P02T3 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 --- --- 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 --- 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 --- 0.078 0.287 10 4 HE E 1 2 3 e1 b e A q L L1 C q 0.08 (0003) A1 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTF6P02T3/D |
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